Optoelectronic semiconductor chip

Optoelectronic semiconductor chip

An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.

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Hauptverfasser: Huber, Michael, Maute, Markus, Eibl, Johann, Engl, Karl, Hartung, Georg
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Huber, Michael
Maute, Markus
Eibl, Johann
Engl, Karl
Hartung, Georg
description An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10014444B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10014444B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10014444B23</originalsourceid><addsrcrecordid>eNrjZFD0LyjJT81JTS4pys_LTFYoTs3NTM7PSylNLskvUkjOyCzgYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBgaGJkDgZGRMjBoAxHEmTQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Optoelectronic semiconductor chip</title><source>esp@cenet</source><creator>Huber, Michael ; Maute, Markus ; Eibl, Johann ; Engl, Karl ; Hartung, Georg</creator><creatorcontrib>Huber, Michael ; Maute, Markus ; Eibl, Johann ; Engl, Karl ; Hartung, Georg</creatorcontrib><description>An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180703&amp;DB=EPODOC&amp;CC=US&amp;NR=10014444B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180703&amp;DB=EPODOC&amp;CC=US&amp;NR=10014444B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Huber, Michael</creatorcontrib><creatorcontrib>Maute, Markus</creatorcontrib><creatorcontrib>Eibl, Johann</creatorcontrib><creatorcontrib>Engl, Karl</creatorcontrib><creatorcontrib>Hartung, Georg</creatorcontrib><title>Optoelectronic semiconductor chip</title><description>An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD0LyjJT81JTS4pys_LTFYoTs3NTM7PSylNLskvUkjOyCzgYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBgaGJkDgZGRMjBoAxHEmTQ</recordid><startdate>20180703</startdate><enddate>20180703</enddate><creator>Huber, Michael</creator><creator>Maute, Markus</creator><creator>Eibl, Johann</creator><creator>Engl, Karl</creator><creator>Hartung, Georg</creator><scope>EVB</scope></search><sort><creationdate>20180703</creationdate><title>Optoelectronic semiconductor chip</title><author>Huber, Michael ; Maute, Markus ; Eibl, Johann ; Engl, Karl ; Hartung, Georg</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10014444B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Huber, Michael</creatorcontrib><creatorcontrib>Maute, Markus</creatorcontrib><creatorcontrib>Eibl, Johann</creatorcontrib><creatorcontrib>Engl, Karl</creatorcontrib><creatorcontrib>Hartung, Georg</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huber, Michael</au><au>Maute, Markus</au><au>Eibl, Johann</au><au>Engl, Karl</au><au>Hartung, Georg</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Optoelectronic semiconductor chip</title><date>2018-07-03</date><risdate>2018</risdate><abstract>An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Optoelectronic semiconductor chip
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T16%3A05%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Huber,%20Michael&rft.date=2018-07-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10014444B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true