Methods of forming 3-D integrated semiconductor devices having intermediate heat spreading capabilities

In a method of forming a three-dimensional semiconductor device, a first chip is provided that includes a first substrate, a first device layer positioned on and covering the first substrate, and a first metallization system positioned on and covering the first device layer, wherein the first device...

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Bibliographische Detailangaben

Hauptverfasser:	Feustel, Frank, Grillberger, Michael, Werner, Thomas
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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