Device for contactless introduction of doping element and/or ADDITIONAL alloy to the furnace for growing multi-crystalline silicon to charge and/or the melt

Device for contactless introduction of doping element and/or additional alloy to the furnace for growing multi-crystalline silicon to charge and/or the melt that includes a tube for supply of doping element and/or the alloy that is fixed to the side surface of the inspection port of the furnace or t...

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Bibliographische Detailangaben
Hauptverfasser:	Berinhov Serhii Borysovych, Vlasenko Timur Viktorovych, Buchovska Iryna Bohdanivna, Tioschyn Volodymyr Viktorovych, Liaskovskyi Oleksandr Anatoliiovych
Format:	Patent
Sprache:	eng ; rus ; ukr
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BLASTING CHEMISTRY CRYSTAL GROWTH DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE FURNACES HEATING KILNS LIGHTING MEASURING MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL MECHANICAL ENGINEERING METALLURGY METERING BY VOLUME OVENS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RETORTS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS
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