Semiconductor device
A semiconductor device includes a substrate, a P-type heavily doped region, a N-type heavily doped region, a P-type lightly doped region, a gate dielectric layer and a gate layer. The P-type heavily doped region is in the substrate. The N-type heavily doped region is in the substrate and adjacent th...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!