Semiconductor device

A semiconductor device includes a substrate, a P-type heavily doped region, a N-type heavily doped region, a P-type lightly doped region, a gate dielectric layer and a gate layer. The P-type heavily doped region is in the substrate. The N-type heavily doped region is in the substrate and adjacent th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KUO, HAOUNG, CHIANG, KUANG-HAO, HSIAO, YI-KAI, HSU, WENANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!