Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is dispos...
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| creator | LEE, MENG-TSAN HUNG, WENSEN CHEN, TSUNG-YU |
| description | A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI858641BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI858641BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI858641BB3</originalsourceid><addsrcrecordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfEh4Z4WphZmJoZOTsZEKAEAVJstyg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and manufacturing method thereof</title><source>esp@cenet</source><creator>LEE, MENG-TSAN ; HUNG, WENSEN ; CHEN, TSUNG-YU</creator><creatorcontrib>LEE, MENG-TSAN ; HUNG, WENSEN ; CHEN, TSUNG-YU</creatorcontrib><description>A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241011&DB=EPODOC&CC=TW&NR=I858641B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241011&DB=EPODOC&CC=TW&NR=I858641B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, MENG-TSAN</creatorcontrib><creatorcontrib>HUNG, WENSEN</creatorcontrib><creatorcontrib>CHEN, TSUNG-YU</creatorcontrib><title>Semiconductor device and manufacturing method thereof</title><description>A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfEh4Z4WphZmJoZOTsZEKAEAVJstyg</recordid><startdate>20241011</startdate><enddate>20241011</enddate><creator>LEE, MENG-TSAN</creator><creator>HUNG, WENSEN</creator><creator>CHEN, TSUNG-YU</creator><scope>EVB</scope></search><sort><creationdate>20241011</creationdate><title>Semiconductor device and manufacturing method thereof</title><author>LEE, MENG-TSAN ; HUNG, WENSEN ; CHEN, TSUNG-YU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI858641BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, MENG-TSAN</creatorcontrib><creatorcontrib>HUNG, WENSEN</creatorcontrib><creatorcontrib>CHEN, TSUNG-YU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, MENG-TSAN</au><au>HUNG, WENSEN</au><au>CHEN, TSUNG-YU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and manufacturing method thereof</title><date>2024-10-11</date><risdate>2024</risdate><abstract>A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device and manufacturing method thereof |
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