Insulated-gate bipolar transistor (igbt) and fabricating method thereof

Insulated-gate bipolar transistor (igbt) and fabricating method thereof

An insulated gate bipolar transistor (IGBT) includes: a semiconductor substrate having a top surface and a bottom surface extending in horizontal directions; an isolation region comprising a first silicon compound; a high thermal conductivity region comprising a second silicon compound and having a...

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1. Verfasser: LIN, HUNG-TE
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Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description An insulated gate bipolar transistor (IGBT) includes: a semiconductor substrate having a top surface and a bottom surface extending in horizontal directions; an isolation region comprising a first silicon compound; a high thermal conductivity region comprising a second silicon compound and having a bottom portion and a sidewall portion, wherein the second silicon compound has a thermal conductivity higher than silicon; a collector region of a first conductive type disposed on the isolation region; a buffer region of a second conductive type opposite to the first conductive type disposed on the collector region; a drift region of the second conductive type disposed on the buffer region; a body region of the first conductive type disposed in the drift region; and at least one source region of the second conductive type disposed in the body region. The isolation region encircles the high thermal conductivity region in the horizontal directions.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Insulated-gate bipolar transistor (igbt) and fabricating method thereof
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