Photo mask for extreme ultraviolet lithography
A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 5...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SU, WEI-SHUO HSIEH, KEN-HSIEN CHANG, YA HUI CHENG, CHIEH-JEN WANG, SHENG-MIN LAI, YU-TSE |
| description | A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI855530BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI855530BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI855530BB3</originalsourceid><addsrcrecordid>eNrjZNALyMgvyVfITSzOVkjLL1JIrSgpSs1NVSjNKSlKLMvMz0ktUcjJLMnITy9KLMio5GFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8SHhnhampqbGBk5OxkQoAQDnECsw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Photo mask for extreme ultraviolet lithography</title><source>esp@cenet</source><creator>SU, WEI-SHUO ; HSIEH, KEN-HSIEN ; CHANG, YA HUI ; CHENG, CHIEH-JEN ; WANG, SHENG-MIN ; LAI, YU-TSE</creator><creatorcontrib>SU, WEI-SHUO ; HSIEH, KEN-HSIEN ; CHANG, YA HUI ; CHENG, CHIEH-JEN ; WANG, SHENG-MIN ; LAI, YU-TSE</creatorcontrib><description>A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240911&DB=EPODOC&CC=TW&NR=I855530B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240911&DB=EPODOC&CC=TW&NR=I855530B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SU, WEI-SHUO</creatorcontrib><creatorcontrib>HSIEH, KEN-HSIEN</creatorcontrib><creatorcontrib>CHANG, YA HUI</creatorcontrib><creatorcontrib>CHENG, CHIEH-JEN</creatorcontrib><creatorcontrib>WANG, SHENG-MIN</creatorcontrib><creatorcontrib>LAI, YU-TSE</creatorcontrib><title>Photo mask for extreme ultraviolet lithography</title><description>A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALyMgvyVfITSzOVkjLL1JIrSgpSs1NVSjNKSlKLMvMz0ktUcjJLMnITy9KLMio5GFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8SHhnhampqbGBk5OxkQoAQDnECsw</recordid><startdate>20240911</startdate><enddate>20240911</enddate><creator>SU, WEI-SHUO</creator><creator>HSIEH, KEN-HSIEN</creator><creator>CHANG, YA HUI</creator><creator>CHENG, CHIEH-JEN</creator><creator>WANG, SHENG-MIN</creator><creator>LAI, YU-TSE</creator><scope>EVB</scope></search><sort><creationdate>20240911</creationdate><title>Photo mask for extreme ultraviolet lithography</title><author>SU, WEI-SHUO ; HSIEH, KEN-HSIEN ; CHANG, YA HUI ; CHENG, CHIEH-JEN ; WANG, SHENG-MIN ; LAI, YU-TSE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI855530BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SU, WEI-SHUO</creatorcontrib><creatorcontrib>HSIEH, KEN-HSIEN</creatorcontrib><creatorcontrib>CHANG, YA HUI</creatorcontrib><creatorcontrib>CHENG, CHIEH-JEN</creatorcontrib><creatorcontrib>WANG, SHENG-MIN</creatorcontrib><creatorcontrib>LAI, YU-TSE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SU, WEI-SHUO</au><au>HSIEH, KEN-HSIEN</au><au>CHANG, YA HUI</au><au>CHENG, CHIEH-JEN</au><au>WANG, SHENG-MIN</au><au>LAI, YU-TSE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photo mask for extreme ultraviolet lithography</title><date>2024-09-11</date><risdate>2024</risdate><abstract>A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TWI855530BB |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Photo mask for extreme ultraviolet lithography |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T17%3A47%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SU,%20WEI-SHUO&rft.date=2024-09-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI855530BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |