Wafer defect detection device
A wafer defect detection device is adapted for detecting a sample to be tested including two detection features. The wafer defect detection device includes a stage, a light source module and an image sensor device. The stage is adapted for holding the sample to be tested. The light source module is...
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creator | HWANG, YIIA LIN, CHING-LIANG |
description | A wafer defect detection device is adapted for detecting a sample to be tested including two detection features. The wafer defect detection device includes a stage, a light source module and an image sensor device. The stage is adapted for holding the sample to be tested. The light source module is configured to output a detection light to the sample to be tested on the stage and reflecting a reflected light. The detection light includes spectra of a first light and a second light, and the first light and the second light have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features, and the spectrum of the second light is adapted for detecting the other of the detection features. A luminous intensity of the first light and a light intensity of the second light are independently controlled. The reflected light includes an image frame, and the image screen displays the detection features. The image sensor is disposed on a path of the reflected light |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI854382BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI854382BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI854382BB3</originalsourceid><addsrcrecordid>eNrjZJANT0xLLVJISU1LTS4BUiVAKjM_D8gqy0xO5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8SHhnhamJsYWRk5OxkQoAQCCuyQZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Wafer defect detection device</title><source>esp@cenet</source><creator>HWANG, YIIA ; LIN, CHING-LIANG</creator><creatorcontrib>HWANG, YIIA ; LIN, CHING-LIANG</creatorcontrib><description>A wafer defect detection device is adapted for detecting a sample to be tested including two detection features. The wafer defect detection device includes a stage, a light source module and an image sensor device. The stage is adapted for holding the sample to be tested. The light source module is configured to output a detection light to the sample to be tested on the stage and reflecting a reflected light. The detection light includes spectra of a first light and a second light, and the first light and the second light have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features, and the spectrum of the second light is adapted for detecting the other of the detection features. A luminous intensity of the first light and a light intensity of the second light are independently controlled. The reflected light includes an image frame, and the image screen displays the detection features. The image sensor is disposed on a path of the reflected light</description><language>chi ; eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240901&DB=EPODOC&CC=TW&NR=I854382B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240901&DB=EPODOC&CC=TW&NR=I854382B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HWANG, YIIA</creatorcontrib><creatorcontrib>LIN, CHING-LIANG</creatorcontrib><title>Wafer defect detection device</title><description>A wafer defect detection device is adapted for detecting a sample to be tested including two detection features. The wafer defect detection device includes a stage, a light source module and an image sensor device. The stage is adapted for holding the sample to be tested. The light source module is configured to output a detection light to the sample to be tested on the stage and reflecting a reflected light. The detection light includes spectra of a first light and a second light, and the first light and the second light have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features, and the spectrum of the second light is adapted for detecting the other of the detection features. A luminous intensity of the first light and a light intensity of the second light are independently controlled. The reflected light includes an image frame, and the image screen displays the detection features. The image sensor is disposed on a path of the reflected light</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJANT0xLLVJISU1LTS4BUiVAKjM_D8gqy0xO5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8SHhnhamJsYWRk5OxkQoAQCCuyQZ</recordid><startdate>20240901</startdate><enddate>20240901</enddate><creator>HWANG, YIIA</creator><creator>LIN, CHING-LIANG</creator><scope>EVB</scope></search><sort><creationdate>20240901</creationdate><title>Wafer defect detection device</title><author>HWANG, YIIA ; LIN, CHING-LIANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI854382BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HWANG, YIIA</creatorcontrib><creatorcontrib>LIN, CHING-LIANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HWANG, YIIA</au><au>LIN, CHING-LIANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Wafer defect detection device</title><date>2024-09-01</date><risdate>2024</risdate><abstract>A wafer defect detection device is adapted for detecting a sample to be tested including two detection features. The wafer defect detection device includes a stage, a light source module and an image sensor device. The stage is adapted for holding the sample to be tested. The light source module is configured to output a detection light to the sample to be tested on the stage and reflecting a reflected light. The detection light includes spectra of a first light and a second light, and the first light and the second light have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features, and the spectrum of the second light is adapted for detecting the other of the detection features. A luminous intensity of the first light and a light intensity of the second light are independently controlled. The reflected light includes an image frame, and the image screen displays the detection features. The image sensor is disposed on a path of the reflected light</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
title | Wafer defect detection device |
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