P-type gan high electron mobility transistor
A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped l...
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| creator | LIN, SHIH-KAI CHOU, SHENG-YAO WU, CHUNG-WEI CHEN, PO-HSUN HUANG, WEIN ZHANG, YONG-CI CHANG, TINGANG |
| description | A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine. |
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| title | P-type gan high electron mobility transistor |
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