Image sensor having a lateral photodetector structure and forming method thereof

The present disclosure relates to an image sensor including a first semiconductor layer having a first doping type. A second semiconductor layer having the first doping type is between sidewalls of the first semiconductor layer and extends vertically along the sidewalls of the first semiconductor la...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG, TZU-JUI, HUANG, KUOIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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