TWI836534B

A memory device includes control circuitry that executes a first programming operation and executes a second programming operation after the first programming operation. The first programming operation includes setting a threshold voltage of each of a second set of memory cells in a second section c...

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Bibliographische Detailangaben

1. Verfasser:	KUROSAWA, YASUHIKO
Format:	Patent
Sprache:	chi
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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