Monolithic ceramic gas distribution plate
A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lowe...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | LINGAMPALLI, RAMKISHAN RAO TUCKER, JEREMY |
description | A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum. The inner plenum is in in fluid communication with a second gas inlet located in a central portion of |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI835740BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI835740BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI835740BB3</originalsourceid><addsrcrecordid>eNrjZND0zc_Lz8ksychMVkhOLUrMBdLpicUKKZnFJUWZSaUlmfl5CgU5iSWpPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPiTc08LY1NzEwMnJmAglANs2KQs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Monolithic ceramic gas distribution plate</title><source>esp@cenet</source><creator>LINGAMPALLI, RAMKISHAN RAO ; TUCKER, JEREMY</creator><creatorcontrib>LINGAMPALLI, RAMKISHAN RAO ; TUCKER, JEREMY</creatorcontrib><description>A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum. The inner plenum is in in fluid communication with a second gas inlet located in a central portion of</description><language>chi ; eng</language><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; ARTIFICIAL STONE ; ATOMISING APPARATUS ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; METALLURGY ; NOZZLES ; PERFORMING OPERATIONS ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; SPRAYING APPARATUS ; SPRAYING OR ATOMISING IN GENERAL ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; TREATMENT OF NATURAL STONE</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240321&DB=EPODOC&CC=TW&NR=I835740B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240321&DB=EPODOC&CC=TW&NR=I835740B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LINGAMPALLI, RAMKISHAN RAO</creatorcontrib><creatorcontrib>TUCKER, JEREMY</creatorcontrib><title>Monolithic ceramic gas distribution plate</title><description>A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum. The inner plenum is in in fluid communication with a second gas inlet located in a central portion of</description><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>ARTIFICIAL STONE</subject><subject>ATOMISING APPARATUS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>NOZZLES</subject><subject>PERFORMING OPERATIONS</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>SPRAYING APPARATUS</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND0zc_Lz8ksychMVkhOLUrMBdLpicUKKZnFJUWZSaUlmfl5CgU5iSWpPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPiTc08LY1NzEwMnJmAglANs2KQs</recordid><startdate>20240321</startdate><enddate>20240321</enddate><creator>LINGAMPALLI, RAMKISHAN RAO</creator><creator>TUCKER, JEREMY</creator><scope>EVB</scope></search><sort><creationdate>20240321</creationdate><title>Monolithic ceramic gas distribution plate</title><author>LINGAMPALLI, RAMKISHAN RAO ; TUCKER, JEREMY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI835740BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>ARTIFICIAL STONE</topic><topic>ATOMISING APPARATUS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>NOZZLES</topic><topic>PERFORMING OPERATIONS</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>SPRAYING APPARATUS</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>LINGAMPALLI, RAMKISHAN RAO</creatorcontrib><creatorcontrib>TUCKER, JEREMY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LINGAMPALLI, RAMKISHAN RAO</au><au>TUCKER, JEREMY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Monolithic ceramic gas distribution plate</title><date>2024-03-21</date><risdate>2024</risdate><abstract>A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum. The inner plenum is in in fluid communication with a second gas inlet located in a central portion of</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_TWI835740BB |
source | esp@cenet |
subjects | APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ARTIFICIAL STONE ATOMISING APPARATUS BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY NOZZLES PERFORMING OPERATIONS REFRACTORIES SEMICONDUCTOR DEVICES SLAG SPRAYING APPARATUS SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF NATURAL STONE |
title | Monolithic ceramic gas distribution plate |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T00%3A26%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LINGAMPALLI,%20RAMKISHAN%20RAO&rft.date=2024-03-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI835740BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |