Metal-silicide-nitridation for stress reduction
A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pell...
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| creator | SJMAENOK, LEONID AIZIKOVITSJ VAN DER WOORD, TIES WOUTER KURGANOVA, EVGENIA GIESBERS, ADRIANUS JOHANNES MARIA VAN ZWOL, PIETER-JAN NASALEVICH, MAXIM ALEKSANDROVICH NOTENBOOM, ARNOUD WILLEM PETER, MARIA KLOOTWIJK, JOHAN HENDRIK VLES, DAVID FERDINAND |
| description | A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle. |
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Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240311&DB=EPODOC&CC=TW&NR=I835311B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240311&DB=EPODOC&CC=TW&NR=I835311B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SJMAENOK, LEONID AIZIKOVITSJ</creatorcontrib><creatorcontrib>VAN DER WOORD, TIES WOUTER</creatorcontrib><creatorcontrib>KURGANOVA, EVGENIA</creatorcontrib><creatorcontrib>GIESBERS, ADRIANUS JOHANNES MARIA</creatorcontrib><creatorcontrib>VAN ZWOL, PIETER-JAN</creatorcontrib><creatorcontrib>NASALEVICH, MAXIM ALEKSANDROVICH</creatorcontrib><creatorcontrib>NOTENBOOM, ARNOUD WILLEM</creatorcontrib><creatorcontrib>PETER, MARIA</creatorcontrib><creatorcontrib>KLOOTWIJK, JOHAN HENDRIK</creatorcontrib><creatorcontrib>VLES, DAVID FERDINAND</creatorcontrib><title>Metal-silicide-nitridation for stress reduction</title><description>A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. 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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Metal-silicide-nitridation for stress reduction |
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