Method of selectively forming metal silicides for semiconductor devices

A substrate processing method includes providing a substrate containing a first semiconductor material and a second semiconductor material, treating the first semiconductor material and the second semiconductor material with a chemical source that selectively forms a chemical layer on the second sem...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	TAPILY, KANDABARA N
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!