TWI834266B
A sputtering apparatus includes: a processing chamber; a substrate holder configured to hold a substrate with a substrate holding surface in a processing space in the processing chamber; a first target holder configured to hold a first target such that a first surface of the first target faces the p...
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| creator | FUJIHARA, TOORU KARINO, SUSUMU TODA, TETSURO |
| description | A sputtering apparatus includes: a processing chamber; a substrate holder configured to hold a substrate with a substrate holding surface in a processing space in the processing chamber; a first target holder configured to hold a first target such that a first surface of the first target faces the processing space; and a second target holder configured to hold a second target such that a second surface of the second target faces the processing space, wherein the first target holder holds the first target such that an orthogonal projection vector of a first normal vector, which is a normal vector of the first surface, with respect to a virtual plane including the substrate holding surface is directed to a direction away from the substrate, and the second target holder holds the second target such that an orthogonal projection vector of a second normal vector, which is a normal vector of the second surface, with respect to the virtual plane is directed to a direction away from the substrate. |
| format | Patent |
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and a second target holder configured to hold a second target such that a second surface of the second target faces the processing space, wherein the first target holder holds the first target such that an orthogonal projection vector of a first normal vector, which is a normal vector of the first surface, with respect to a virtual plane including the substrate holding surface is directed to a direction away from the substrate, and the second target holder holds the second target such that an orthogonal projection vector of a second normal vector, which is a normal vector of the second surface, with respect to the virtual plane is directed to a direction away from the substrate.</description><language>chi</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240301&DB=EPODOC&CC=TW&NR=I834266B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240301&DB=EPODOC&CC=TW&NR=I834266B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJIHARA, TOORU</creatorcontrib><creatorcontrib>KARINO, SUSUMU</creatorcontrib><creatorcontrib>TODA, TETSURO</creatorcontrib><title>TWI834266B</title><description>A sputtering apparatus includes: a processing chamber; 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KARINO, SUSUMU ; TODA, TETSURO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI834266BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJIHARA, TOORU</creatorcontrib><creatorcontrib>KARINO, SUSUMU</creatorcontrib><creatorcontrib>TODA, TETSURO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJIHARA, TOORU</au><au>KARINO, SUSUMU</au><au>TODA, TETSURO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TWI834266B</title><date>2024-03-01</date><risdate>2024</risdate><abstract>A sputtering apparatus includes: a processing chamber; a substrate holder configured to hold a substrate with a substrate holding surface in a processing space in the processing chamber; a first target holder configured to hold a first target such that a first surface of the first target faces the processing space; and a second target holder configured to hold a second target such that a second surface of the second target faces the processing space, wherein the first target holder holds the first target such that an orthogonal projection vector of a first normal vector, which is a normal vector of the first surface, with respect to a virtual plane including the substrate holding surface is directed to a direction away from the substrate, and the second target holder holds the second target such that an orthogonal projection vector of a second normal vector, which is a normal vector of the second surface, with respect to the virtual plane is directed to a direction away from the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | TWI834266B |
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