Semiconductor structure and method for preparing same
Embodiments of the present application relate to the field of semiconductors, and in particular, to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a gate located on a substrate, a source or a drain being provided on two sides of the gate; a diel...
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| creator | WU, TIEHIANG ZHU, LINGXIN |
| description | Embodiments of the present application relate to the field of semiconductors, and in particular, to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a gate located on a substrate, a source or a drain being provided on two sides of the gate; a dielectric layer located on the substrate; a contact structure which passes through the dielectric layer and is electrically connected to the source or the drain; a first electrical connection portion and a second electrical connection portion which are spaced from each other and are located on the top surface of the dielectric layer, the second electrical connection portion being in contact with part of the top surface of the contact structure, and the first electrical connection portion comprising a first barrier layer and a first conductive layer that are stacked. In a direction from the source to the drain, the distance between the side wall of the first barrier layer facing the contact structure and the contact st |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor structure and method for preparing same |
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