Nitride-based semiconductor bidirectional switching device and method for manufacturing the same

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate po...

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Bibliographische Detailangaben

Hauptverfasser:	LI, MAOLIN, YANG, CHAO, ZHOU, CHUNHUA, GAO, WUHAO, CHENG, SHAOPENG, YANG, GUANSHEN, ZHAO, QIYUE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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