TWI821793B
According to some embodiments of the present disclosure, a gas line whose gas flow rate is to be edited by a user can be confirmed. There is provided a technique that includes: (a) displaying, on a recipe edit screen, a parameter setting region configured to set control parameters including a gas fl...
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| creator | KAWASAKI, JUNICHI MORI, SHINICHIRO YAMAZAKI, SATOMI JOHO, YASUHIRO |
| description | According to some embodiments of the present disclosure, a gas line whose gas flow rate is to be edited by a user can be confirmed. There is provided a technique that includes: (a) displaying, on a recipe edit screen, a parameter setting region configured to set control parameters including a gas flow rate of a flow rate controller and a gas pattern screen configured to set an opening/closing state of a valve; (b) editing the recipe on the recipe edit screen; and (c) processing a substrate by performing the recipe edited in (b). When the gas flow rate of the flow rate controller is set on the parameter setting region, a flow rate controller on the gas pattern screen in association with the flow rate controller whose gas flow rate is set on the parameter setting region is clearly specified. |
| format | Patent |
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There is provided a technique that includes: (a) displaying, on a recipe edit screen, a parameter setting region configured to set control parameters including a gas flow rate of a flow rate controller and a gas pattern screen configured to set an opening/closing state of a valve; (b) editing the recipe on the recipe edit screen; and (c) processing a substrate by performing the recipe edited in (b). When the gas flow rate of the flow rate controller is set on the parameter setting region, a flow rate controller on the gas pattern screen in association with the flow rate controller whose gas flow rate is set on the parameter setting region is clearly specified.</description><language>chi</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231111&DB=EPODOC&CC=TW&NR=I821793B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231111&DB=EPODOC&CC=TW&NR=I821793B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWASAKI, JUNICHI</creatorcontrib><creatorcontrib>MORI, SHINICHIRO</creatorcontrib><creatorcontrib>YAMAZAKI, SATOMI</creatorcontrib><creatorcontrib>JOHO, YASUHIRO</creatorcontrib><title>TWI821793B</title><description>According to some embodiments of the present disclosure, a gas line whose gas flow rate is to be edited by a user can be confirmed. 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There is provided a technique that includes: (a) displaying, on a recipe edit screen, a parameter setting region configured to set control parameters including a gas flow rate of a flow rate controller and a gas pattern screen configured to set an opening/closing state of a valve; (b) editing the recipe on the recipe edit screen; and (c) processing a substrate by performing the recipe edited in (b). When the gas flow rate of the flow rate controller is set on the parameter setting region, a flow rate controller on the gas pattern screen in association with the flow rate controller whose gas flow rate is set on the parameter setting region is clearly specified.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | TWI821793B |
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