Formation of bottom isolation
A semiconductor structure may include a source, a drain, a plurality of nanowire channels between the source and the drain, and a bottom insulation layer. The plurality of nanowire channels may each have a width defined by the source and drain. The bottom insulation layer may contact a bottom nanowi...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor structure may include a source, a drain, a plurality of nanowire channels between the source and the drain, and a bottom insulation layer. The plurality of nanowire channels may each have a width defined by the source and drain. The bottom insulation layer may contact a bottom nanowire channel of the plurality of nanowire channels and may be disposed between the source and drain. The bottom insulation layer may have a width no greater than the width of the bottom nanowire channel. |
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