Image sensor, semiconductor device and manufacturing method thereof

An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure cov...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUNG, FENGI, CHEN, SHENGAU, YAUNG, DUN-NIAN, KAO, MIN-FENG, KUO, WENANG, LIU, JENNG, LI, SHENGAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!