High-electron mobility transistor and fabrication method thereof

A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region an...

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Hauptverfasser:	CHANG, CHUN-MING, YEH, CHIH-TUNG, HOU, CHUN-LIANG, HUANG, SHINUAN, CHEN, BO-RONG, LIAO, WEN-JUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	CHANG, CHUN-MING YEH, CHIH-TUNG HOU, CHUN-LIANG HUANG, SHINUAN CHEN, BO-RONG LIAO, WEN-JUNG
description	A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.
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title	High-electron mobility transistor and fabrication method thereof
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