TWI809154B
A film forming apparatus configured to form a predetermined film on a substrate by PEALD includes a processing container configured to airtightly accommodate the substrate; and a placing table on which the substrate is placed within the processing container. The processing container includes an exha...
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creator | AZUMA, YUKI KOBAYASHI, HIDEYUKI NAGAIKE, HIROSHI IWASAKI, TAKAHISA HSIEH, CHI JU YOSHIKOSHI, DAISUKE FUNAKUBO, TAKAO |
description | A film forming apparatus configured to form a predetermined film on a substrate by PEALD includes a processing container configured to airtightly accommodate the substrate; and a placing table on which the substrate is placed within the processing container. The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. The partition wall includes a flow path configured to connect the processing space side and the exhaust opening side, and the partition wall is formed such that the exhaust opening side is not seen from the processing space side when an extension direction of the exhaust path is viewed from a top. |
format | Patent |
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The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. The partition wall includes a flow path configured to connect the processing space side and the exhaust opening side, and the partition wall is formed such that the exhaust opening side is not seen from the processing space side when an extension direction of the exhaust path is viewed from a top.</description><language>chi</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230721&DB=EPODOC&CC=TW&NR=I809154B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230721&DB=EPODOC&CC=TW&NR=I809154B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AZUMA, YUKI</creatorcontrib><creatorcontrib>KOBAYASHI, HIDEYUKI</creatorcontrib><creatorcontrib>NAGAIKE, HIROSHI</creatorcontrib><creatorcontrib>IWASAKI, TAKAHISA</creatorcontrib><creatorcontrib>HSIEH, CHI JU</creatorcontrib><creatorcontrib>YOSHIKOSHI, DAISUKE</creatorcontrib><creatorcontrib>FUNAKUBO, TAKAO</creatorcontrib><title>TWI809154B</title><description>A film forming apparatus configured to form a predetermined film on a substrate by PEALD includes a processing container configured to airtightly accommodate the substrate; and a placing table on which the substrate is placed within the processing container. The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. 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The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. The partition wall includes a flow path configured to connect the processing space side and the exhaust opening side, and the partition wall is formed such that the exhaust opening side is not seen from the processing space side when an extension direction of the exhaust path is viewed from a top.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | TWI809154B |
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