TWI809037B

TWI809037B

Provided is a high-sensitivity-side transfer transistor that transfers a charge from a high-sensitivity photodiode having a sensitivity higher than a predetermined sensitivity to a first charge storage unit. A low-sensitivity-side transfer transistor that transfers a charge from a low-sensitivity ph...

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1. Verfasser: YONEMOTO, KAZUYA
Format: Patent
Sprache:chi
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator YONEMOTO, KAZUYA
description Provided is a high-sensitivity-side transfer transistor that transfers a charge from a high-sensitivity photodiode having a sensitivity higher than a predetermined sensitivity to a first charge storage unit. A low-sensitivity-side transfer transistor that transfers a charge from a low-sensitivity photodiode having a sensitivity lower than the predetermined sensitivity to a second charge storage unit. An amplification transistor that amplifies a voltage of the first charge storage unit. A first conversion efficiency control transistor that controls conversion efficiency of converting the charge to the voltage by opening and closing a pathway between the first and second charge storage units. A second conversion efficiency control transistor that controls the conversion efficiency by opening and closing a pathway between the second charge storage unit and a third charge storage unit.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TWI809037B
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