TWI807057B
A film thickness measurement device according to one aspect of the present disclosure includes: a first computing unit configured to, for each location on a first wafer having a known thickness other than a reference location on the first wafer, calculate a relative reflectance of a reflection spect...
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| creator | UMEHARA, YASUTOSHI |
| description | A film thickness measurement device according to one aspect of the present disclosure includes: a first computing unit configured to, for each location on a first wafer having a known thickness other than a reference location on the first wafer, calculate a relative reflectance of a reflection spectral signal of reflected light detected by a collection probe, with respect to a reference reflection spectral signal of reflected light detected by the collection probe at the reference location on the first wafer; a specifying unit configured to specify a relationship between the relative reflectance calculated by the first computing unit and distance data representing a distance between the location on the first wafer and the collection probe; a second computing unit configured to calculate relative reflectances each corresponding to distance data representing a distance between the collection probe and a corresponding location on a second wafer to be measured, based on the relationship specified by the specifyin |
| format | Patent |
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a specifying unit configured to specify a relationship between the relative reflectance calculated by the first computing unit and distance data representing a distance between the location on the first wafer and the collection probe; a second computing unit configured to calculate relative reflectances each corresponding to distance data representing a distance between the collection probe and a corresponding location on a second wafer to be measured, based on the relationship specified by the specifyin</description><language>chi</language><subject>MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PHYSICS ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230701&DB=EPODOC&CC=TW&NR=I807057B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230701&DB=EPODOC&CC=TW&NR=I807057B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UMEHARA, YASUTOSHI</creatorcontrib><title>TWI807057B</title><description>A film thickness measurement device according to one aspect of the present disclosure includes: a first computing unit configured to, for each location on a first wafer having a known thickness other than a reference location on the first wafer, calculate a relative reflectance of a reflection spectral signal of reflected light detected by a collection probe, with respect to a reference reflection spectral signal of reflected light detected by the collection probe at the reference location on the first wafer; a specifying unit configured to specify a relationship between the relative reflectance calculated by the first computing unit and distance data representing a distance between the location on the first wafer and the collection probe; a second computing unit configured to calculate relative reflectances each corresponding to distance data representing a distance between the collection probe and a corresponding location on a second wafer to be measured, based on the relationship specified by the specifyin</description><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAKCfe0MDA3MDV34mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEACpQbgg</recordid><startdate>20230701</startdate><enddate>20230701</enddate><creator>UMEHARA, YASUTOSHI</creator><scope>EVB</scope></search><sort><creationdate>20230701</creationdate><title>TWI807057B</title><author>UMEHARA, YASUTOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI807057BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi</language><creationdate>2023</creationdate><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>UMEHARA, YASUTOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UMEHARA, YASUTOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TWI807057B</title><date>2023-07-01</date><risdate>2023</risdate><abstract>A film thickness measurement device according to one aspect of the present disclosure includes: a first computing unit configured to, for each location on a first wafer having a known thickness other than a reference location on the first wafer, calculate a relative reflectance of a reflection spectral signal of reflected light detected by a collection probe, with respect to a reference reflection spectral signal of reflected light detected by the collection probe at the reference location on the first wafer; a specifying unit configured to specify a relationship between the relative reflectance calculated by the first computing unit and distance data representing a distance between the location on the first wafer and the collection probe; a second computing unit configured to calculate relative reflectances each corresponding to distance data representing a distance between the collection probe and a corresponding location on a second wafer to be measured, based on the relationship specified by the specifyin</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi |
| recordid | cdi_epo_espacenet_TWI807057BB |
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| subjects | MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS TESTING |
| title | TWI807057B |
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