TWI801670B

The capacity of a MOS capacitor is increased. A semiconductor element includes a first semiconductor region, an insulation film, a gate electrode, and a second semiconductor region. The first semiconductor region is arranged on a semiconductor substrate and has a recess on the surface. The insulatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAGUCHI, KAZUKI, KASAHARA, NORIKAZU, WATANABE, TAKASHI, TOMITA, CHIHIRO, OKAMOTO, SHINTARO, EDA, KENTARO, SUZUKI, KOHEI, HIRAI, TOMOHIRO
Format:	Patent
Sprache:	chi
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!