Method of forming an extra low-k inter-metal dielectric layer, method for manufacturing an integrated circuit, and semiconductor device

Method of forming an extra low-k inter-metal dielectric layer, method for manufacturing an integrated circuit, and semiconductor device

A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer....

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Hauptverfasser: CHOU, CHIA CHENG, LI, CHUN TE, SHIH, PO CHENG
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Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHOU, CHIA CHENG
LI, CHUN TE
SHIH, PO CHENG
description A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of forming an extra low-k inter-metal dielectric layer, method for manufacturing an integrated circuit, and semiconductor device
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