TWI794488B
Provided is an aluminum alloy member for forming a fluoride film thereon, the fluoride film being excellent in smoothness without occurrence of a black dot-shaped bulged portion and excellent in corrosion resistance against corrosive gas and plasma, etc. The aluminum alloy member for forming a fluor...
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| creator | MURASE, ISAO |
| description | Provided is an aluminum alloy member for forming a fluoride film thereon, the fluoride film being excellent in smoothness without occurrence of a black dot-shaped bulged portion and excellent in corrosion resistance against corrosive gas and plasma, etc. The aluminum alloy member for forming a fluoride film thereon 1 for use in a semiconductor producing apparatus consists of Si: 0.3 mass % to 0.8 mass %; Mg: 0.5 mass % to 5.0 mass %; Fe: 0.05 mass % to 0.5 mass %; Cu: 0 mass % or more and 0.5 mass % or less; Mn: 0 mass % or more and 0.30 mass % or less; Cr: 0 mass % or more and 0.30 mass % or less 0.5 mass % or less; and the balance being Al and inevitable impurities. When an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (μm), and an average crystalline particle diameter in the aluminum alloy member is Y (μm), a relation expression of log10 Y←0.320D+4.60 is satisfied. A fluoride film 2 is formed on at least a part of a surface of the aluminum alloy member 1 for fo |
| format | Patent |
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When an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (μm), and an average crystalline particle diameter in the aluminum alloy member is Y (μm), a relation expression of log10 Y←0.320D+4.60 is satisfied. 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When an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (μm), and an average crystalline particle diameter in the aluminum alloy member is Y (μm), a relation expression of log10 Y←0.320D+4.60 is satisfied. 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When an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (μm), and an average crystalline particle diameter in the aluminum alloy member is Y (μm), a relation expression of log10 Y←0.320D+4.60 is satisfied. A fluoride film 2 is formed on at least a part of a surface of the aluminum alloy member 1 for fo</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | TWI794488B |
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