Semiconductor memory device and a method for providing the same

A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: RAKSHIT, TITASH, KITTL, JORGE ADRIAN, HATCHER, RYAN MICHAEL, OBRADOVIC, BORNA JOSIP
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator RAKSHIT, TITASH
KITTL, JORGE ADRIAN
HATCHER, RYAN MICHAEL
OBRADOVIC, BORNA JOSIP
description A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI793302BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI793302BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI793302BB3</originalsourceid><addsrcrecordid>eNrjZLAPTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE5VSMxLUUgEipVk5KcopAGlC4ryyzJTMvPSFUoyUhWKE3NTeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJfEi4p7mlsbGBkZOTMRFKADnAMN0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor memory device and a method for providing the same</title><source>esp@cenet</source><creator>RAKSHIT, TITASH ; KITTL, JORGE ADRIAN ; HATCHER, RYAN MICHAEL ; OBRADOVIC, BORNA JOSIP</creator><creatorcontrib>RAKSHIT, TITASH ; KITTL, JORGE ADRIAN ; HATCHER, RYAN MICHAEL ; OBRADOVIC, BORNA JOSIP</creatorcontrib><description>A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.</description><language>chi ; eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230221&amp;DB=EPODOC&amp;CC=TW&amp;NR=I793302B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230221&amp;DB=EPODOC&amp;CC=TW&amp;NR=I793302B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAKSHIT, TITASH</creatorcontrib><creatorcontrib>KITTL, JORGE ADRIAN</creatorcontrib><creatorcontrib>HATCHER, RYAN MICHAEL</creatorcontrib><creatorcontrib>OBRADOVIC, BORNA JOSIP</creatorcontrib><title>Semiconductor memory device and a method for providing the same</title><description>A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAPTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE5VSMxLUUgEipVk5KcopAGlC4ryyzJTMvPSFUoyUhWKE3NTeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJfEi4p7mlsbGBkZOTMRFKADnAMN0</recordid><startdate>20230221</startdate><enddate>20230221</enddate><creator>RAKSHIT, TITASH</creator><creator>KITTL, JORGE ADRIAN</creator><creator>HATCHER, RYAN MICHAEL</creator><creator>OBRADOVIC, BORNA JOSIP</creator><scope>EVB</scope></search><sort><creationdate>20230221</creationdate><title>Semiconductor memory device and a method for providing the same</title><author>RAKSHIT, TITASH ; KITTL, JORGE ADRIAN ; HATCHER, RYAN MICHAEL ; OBRADOVIC, BORNA JOSIP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI793302BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>RAKSHIT, TITASH</creatorcontrib><creatorcontrib>KITTL, JORGE ADRIAN</creatorcontrib><creatorcontrib>HATCHER, RYAN MICHAEL</creatorcontrib><creatorcontrib>OBRADOVIC, BORNA JOSIP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAKSHIT, TITASH</au><au>KITTL, JORGE ADRIAN</au><au>HATCHER, RYAN MICHAEL</au><au>OBRADOVIC, BORNA JOSIP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory device and a method for providing the same</title><date>2023-02-21</date><risdate>2023</risdate><abstract>A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_TWI793302BB
source esp@cenet
subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Semiconductor memory device and a method for providing the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T02%3A01%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RAKSHIT,%20TITASH&rft.date=2023-02-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI793302BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true