Semiconductor memory device and a method for providing the same
A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first...
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creator | RAKSHIT, TITASH KITTL, JORGE ADRIAN HATCHER, RYAN MICHAEL OBRADOVIC, BORNA JOSIP |
description | A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI793302BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI793302BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI793302BB3</originalsourceid><addsrcrecordid>eNrjZLAPTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE5VSMxLUUgEipVk5KcopAGlC4ryyzJTMvPSFUoyUhWKE3NTeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJfEi4p7mlsbGBkZOTMRFKADnAMN0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor memory device and a method for providing the same</title><source>esp@cenet</source><creator>RAKSHIT, TITASH ; KITTL, JORGE ADRIAN ; HATCHER, RYAN MICHAEL ; OBRADOVIC, BORNA JOSIP</creator><creatorcontrib>RAKSHIT, TITASH ; KITTL, JORGE ADRIAN ; HATCHER, RYAN MICHAEL ; OBRADOVIC, BORNA JOSIP</creatorcontrib><description>A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.</description><language>chi ; eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230221&DB=EPODOC&CC=TW&NR=I793302B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230221&DB=EPODOC&CC=TW&NR=I793302B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAKSHIT, TITASH</creatorcontrib><creatorcontrib>KITTL, JORGE ADRIAN</creatorcontrib><creatorcontrib>HATCHER, RYAN MICHAEL</creatorcontrib><creatorcontrib>OBRADOVIC, BORNA JOSIP</creatorcontrib><title>Semiconductor memory device and a method for providing the same</title><description>A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAPTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE5VSMxLUUgEipVk5KcopAGlC4ryyzJTMvPSFUoyUhWKE3NTeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJfEi4p7mlsbGBkZOTMRFKADnAMN0</recordid><startdate>20230221</startdate><enddate>20230221</enddate><creator>RAKSHIT, TITASH</creator><creator>KITTL, JORGE ADRIAN</creator><creator>HATCHER, RYAN MICHAEL</creator><creator>OBRADOVIC, BORNA JOSIP</creator><scope>EVB</scope></search><sort><creationdate>20230221</creationdate><title>Semiconductor memory device and a method for providing the same</title><author>RAKSHIT, TITASH ; KITTL, JORGE ADRIAN ; HATCHER, RYAN MICHAEL ; OBRADOVIC, BORNA JOSIP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI793302BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>RAKSHIT, TITASH</creatorcontrib><creatorcontrib>KITTL, JORGE ADRIAN</creatorcontrib><creatorcontrib>HATCHER, RYAN MICHAEL</creatorcontrib><creatorcontrib>OBRADOVIC, BORNA JOSIP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAKSHIT, TITASH</au><au>KITTL, JORGE ADRIAN</au><au>HATCHER, RYAN MICHAEL</au><au>OBRADOVIC, BORNA JOSIP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory device and a method for providing the same</title><date>2023-02-21</date><risdate>2023</risdate><abstract>A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
title | Semiconductor memory device and a method for providing the same |
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