Method for preparing zninp/zns/alox quantum dots with narrow full width at half maximum, high quantum efficiency and high stability

The present invention provides a method for preparing quantum dots. The method comprises: mixing a first precursor, a complexing agent and a capping agent and reacting under a complexing temperature to form a complex reaction product; under a nucleation reaction temperature, adding a second precursor to the complex reaction product and reacting to form a nucleation reaction product; adding a third precursor to the nucleation reaction product and conducting a reaction at a first shell-forming temperature so as to obtain a first quantum dot ZnInP/ZnS; mixing the first quantum dot with a fourth precursor to form a second quantum dot precursor, and reacting under a second shell-forming temperature to produce a second quantum dot ZnInP/ZnS/AlOx, wherein the third precursor comprises a sulfur precursor, the fourth precursor comprises an aluminum precursor, the first shell-forming temperature is lower or equal to the nucleation reaction temperature, and the second shell-forming temperature is lower or equal to the f