TWI768789B

A semiconductor fabricating method for a film to be processed containing a transition metal on an upper surface of a semiconductor wafer placed in a processing chamber in a container being etched with a gas for complexing the transition metal supplied into the processing chamber, including a first s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAGUCHI, YOSHIHIDE, FUJISAKI, SUMIKO
Format:	Patent
Sprache:	chi
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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