Method of selective deposition for beol dielectric etch
Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to f...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | FEURPRIER, YANNICK PARNELL, DONI |
| description | Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. According to one embodiment, the dielectric material may be a porous low-k material, and the dielectric film seals the pores on a surface of the porous low-k material. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI767964BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI767964BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI767964BB3</originalsourceid><addsrcrecordid>eNrjZDD3TS3JyE9RyE9TKE7NSU0uySxLVUhJLcgvzizJzM9TSMsvUkhKzc9RSMkESxdlJiukliRn8DCwpiXmFKfyQmluBgU31xBnD12g1vjU4oLE5NS81JL4kHBPczNzSzMTJydjIpQAAIPMLhM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of selective deposition for beol dielectric etch</title><source>esp@cenet</source><creator>FEURPRIER, YANNICK ; PARNELL, DONI</creator><creatorcontrib>FEURPRIER, YANNICK ; PARNELL, DONI</creatorcontrib><description>Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. According to one embodiment, the dielectric material may be a porous low-k material, and the dielectric film seals the pores on a surface of the porous low-k material.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220621&DB=EPODOC&CC=TW&NR=I767964B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220621&DB=EPODOC&CC=TW&NR=I767964B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FEURPRIER, YANNICK</creatorcontrib><creatorcontrib>PARNELL, DONI</creatorcontrib><title>Method of selective deposition for beol dielectric etch</title><description>Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. According to one embodiment, the dielectric material may be a porous low-k material, and the dielectric film seals the pores on a surface of the porous low-k material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD3TS3JyE9RyE9TKE7NSU0uySxLVUhJLcgvzizJzM9TSMsvUkhKzc9RSMkESxdlJiukliRn8DCwpiXmFKfyQmluBgU31xBnD12g1vjU4oLE5NS81JL4kHBPczNzSzMTJydjIpQAAIPMLhM</recordid><startdate>20220621</startdate><enddate>20220621</enddate><creator>FEURPRIER, YANNICK</creator><creator>PARNELL, DONI</creator><scope>EVB</scope></search><sort><creationdate>20220621</creationdate><title>Method of selective deposition for beol dielectric etch</title><author>FEURPRIER, YANNICK ; PARNELL, DONI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI767964BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FEURPRIER, YANNICK</creatorcontrib><creatorcontrib>PARNELL, DONI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FEURPRIER, YANNICK</au><au>PARNELL, DONI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of selective deposition for beol dielectric etch</title><date>2022-06-21</date><risdate>2022</risdate><abstract>Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. According to one embodiment, the dielectric material may be a porous low-k material, and the dielectric film seals the pores on a surface of the porous low-k material.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TWI767964BB |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method of selective deposition for beol dielectric etch |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T12%3A31%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FEURPRIER,%20YANNICK&rft.date=2022-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI767964BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |