TWI755031B
According to one embodiment, a semiconductor storage device includes a plurality of first interconnection layers, a semiconductor layer, a first charge storage part, a conductor, and a connection portion. The plurality of first interconnection layers extend in a first direction and are arrayed in a...
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| creator | MOROOKA, TETSU |
| description | According to one embodiment, a semiconductor storage device includes a plurality of first interconnection layers, a semiconductor layer, a first charge storage part, a conductor, and a connection portion. The plurality of first interconnection layers extend in a first direction and are arrayed in a second direction intersecting the first direction. The semiconductor layer extends in the second direction and faces the plurality of first interconnection layers in a third direction intersecting the first direction and the second direction. The first charge storage part is provided between a first interconnection layer and the semiconductor layer. The conductor extends in the second direction on an opposite side of the first charge storage part with respect to the semiconductor layer. The connection portion has a first end that is in contact with the semiconductor layer and a second end that is in contact with the conductor. |
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The plurality of first interconnection layers extend in a first direction and are arrayed in a second direction intersecting the first direction. The semiconductor layer extends in the second direction and faces the plurality of first interconnection layers in a third direction intersecting the first direction and the second direction. The first charge storage part is provided between a first interconnection layer and the semiconductor layer. The conductor extends in the second direction on an opposite side of the first charge storage part with respect to the semiconductor layer. The connection portion has a first end that is in contact with the semiconductor layer and a second end that is in contact with the conductor.</description><language>chi</language><subject>ELECTRICITY</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220211&DB=EPODOC&CC=TW&NR=I755031B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220211&DB=EPODOC&CC=TW&NR=I755031B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MOROOKA, TETSU</creatorcontrib><title>TWI755031B</title><description>According to one embodiment, a semiconductor storage device includes a plurality of first interconnection layers, a semiconductor layer, a first charge storage part, a conductor, and a connection portion. The plurality of first interconnection layers extend in a first direction and are arrayed in a second direction intersecting the first direction. The semiconductor layer extends in the second direction and faces the plurality of first interconnection layers in a third direction intersecting the first direction and the second direction. The first charge storage part is provided between a first interconnection layer and the semiconductor layer. The conductor extends in the second direction on an opposite side of the first charge storage part with respect to the semiconductor layer. The connection portion has a first end that is in contact with the semiconductor layer and a second end that is in contact with the conductor.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAKCfc0NzU1MDZ04mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEAB5cbcA</recordid><startdate>20220211</startdate><enddate>20220211</enddate><creator>MOROOKA, TETSU</creator><scope>EVB</scope></search><sort><creationdate>20220211</creationdate><title>TWI755031B</title><author>MOROOKA, TETSU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI755031BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi</language><creationdate>2022</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>MOROOKA, TETSU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MOROOKA, TETSU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TWI755031B</title><date>2022-02-11</date><risdate>2022</risdate><abstract>According to one embodiment, a semiconductor storage device includes a plurality of first interconnection layers, a semiconductor layer, a first charge storage part, a conductor, and a connection portion. The plurality of first interconnection layers extend in a first direction and are arrayed in a second direction intersecting the first direction. The semiconductor layer extends in the second direction and faces the plurality of first interconnection layers in a third direction intersecting the first direction and the second direction. The first charge storage part is provided between a first interconnection layer and the semiconductor layer. The conductor extends in the second direction on an opposite side of the first charge storage part with respect to the semiconductor layer. The connection portion has a first end that is in contact with the semiconductor layer and a second end that is in contact with the conductor.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi |
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| subjects | ELECTRICITY |
| title | TWI755031B |
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