Methods for wetting substrates

Methods for wetting substrates

Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the proce...

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Hauptverfasser: OBERLITNER, THOMAS H, ANTEN, ANDREW, HARRIS, RANDY, BERNT, MARVIN LOUIS, MCHUGH, PAUL, MCCLURE, ADAM, HOERNER, BRIDGER, PLAVIDAL, RICHARD W, AEGERTER, BRIAN K
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Sprache:chi ; eng
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APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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creator OBERLITNER, THOMAS H
ANTEN, ANDREW
HARRIS, RANDY
BERNT, MARVIN LOUIS
MCHUGH, PAUL
MCCLURE, ADAM
HOERNER, BRIDGER
PLAVIDAL, RICHARD W
AEGERTER, BRIAN K
description Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI749136BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI749136BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI749136BB3</originalsourceid><addsrcrecordid>eNrjZJDzTS3JyE8pVkjLL1IoTy0pycxLVyguTSouKUosSS3mYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxIeGe5iaWhsZmTk7GRCgBAN8VJPg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods for wetting substrates</title><source>esp@cenet</source><creator>OBERLITNER, THOMAS H ; ANTEN, ANDREW ; HARRIS, RANDY ; BERNT, MARVIN LOUIS ; MCHUGH, PAUL ; MCCLURE, ADAM ; HOERNER, BRIDGER ; PLAVIDAL, RICHARD W ; AEGERTER, BRIAN K</creator><creatorcontrib>OBERLITNER, THOMAS H ; ANTEN, ANDREW ; HARRIS, RANDY ; BERNT, MARVIN LOUIS ; MCHUGH, PAUL ; MCCLURE, ADAM ; HOERNER, BRIDGER ; PLAVIDAL, RICHARD W ; AEGERTER, BRIAN K</creatorcontrib><description>Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211211&amp;DB=EPODOC&amp;CC=TW&amp;NR=I749136B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211211&amp;DB=EPODOC&amp;CC=TW&amp;NR=I749136B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OBERLITNER, THOMAS H</creatorcontrib><creatorcontrib>ANTEN, ANDREW</creatorcontrib><creatorcontrib>HARRIS, RANDY</creatorcontrib><creatorcontrib>BERNT, MARVIN LOUIS</creatorcontrib><creatorcontrib>MCHUGH, PAUL</creatorcontrib><creatorcontrib>MCCLURE, ADAM</creatorcontrib><creatorcontrib>HOERNER, BRIDGER</creatorcontrib><creatorcontrib>PLAVIDAL, RICHARD W</creatorcontrib><creatorcontrib>AEGERTER, BRIAN K</creatorcontrib><title>Methods for wetting substrates</title><description>Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDzTS3JyE8pVkjLL1IoTy0pycxLVyguTSouKUosSS3mYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxIeGe5iaWhsZmTk7GRCgBAN8VJPg</recordid><startdate>20211211</startdate><enddate>20211211</enddate><creator>OBERLITNER, THOMAS H</creator><creator>ANTEN, ANDREW</creator><creator>HARRIS, RANDY</creator><creator>BERNT, MARVIN LOUIS</creator><creator>MCHUGH, PAUL</creator><creator>MCCLURE, ADAM</creator><creator>HOERNER, BRIDGER</creator><creator>PLAVIDAL, RICHARD W</creator><creator>AEGERTER, BRIAN K</creator><scope>EVB</scope></search><sort><creationdate>20211211</creationdate><title>Methods for wetting substrates</title><author>OBERLITNER, THOMAS H ; ANTEN, ANDREW ; HARRIS, RANDY ; BERNT, MARVIN LOUIS ; MCHUGH, PAUL ; MCCLURE, ADAM ; HOERNER, BRIDGER ; PLAVIDAL, RICHARD W ; AEGERTER, BRIAN K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI749136BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OBERLITNER, THOMAS H</creatorcontrib><creatorcontrib>ANTEN, ANDREW</creatorcontrib><creatorcontrib>HARRIS, RANDY</creatorcontrib><creatorcontrib>BERNT, MARVIN LOUIS</creatorcontrib><creatorcontrib>MCHUGH, PAUL</creatorcontrib><creatorcontrib>MCCLURE, ADAM</creatorcontrib><creatorcontrib>HOERNER, BRIDGER</creatorcontrib><creatorcontrib>PLAVIDAL, RICHARD W</creatorcontrib><creatorcontrib>AEGERTER, BRIAN K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OBERLITNER, THOMAS H</au><au>ANTEN, ANDREW</au><au>HARRIS, RANDY</au><au>BERNT, MARVIN LOUIS</au><au>MCHUGH, PAUL</au><au>MCCLURE, ADAM</au><au>HOERNER, BRIDGER</au><au>PLAVIDAL, RICHARD W</au><au>AEGERTER, BRIAN K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods for wetting substrates</title><date>2021-12-11</date><risdate>2021</risdate><abstract>Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
title Methods for wetting substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T10%3A31%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OBERLITNER,%20THOMAS%20H&rft.date=2021-12-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI749136BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true