TWI747308B
A semiconductor device according to one embodiment of the present disclosure includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip via a spacer; a first terminal group provided around a stacked body in which the first semiconductor chip and the sec...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | FUKAI, SEIICHIRO ONO, YASUSHI HASHIGUCHI, YUSUKE |
description | A semiconductor device according to one embodiment of the present disclosure includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip via a spacer; a first terminal group provided around a stacked body in which the first semiconductor chip and the second semiconductor chip are stacked, and coupled to the first semiconductor chip; a second terminal group provided on an outer side of the first terminal group, and coupled to the second semiconductor chip; and a package member that seals the first semiconductor chip, the second semiconductor chip, the first terminal group, and the second terminal group, and in which at least the first terminal group and the second terminal group are exposed on a back face. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI747308BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI747308BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI747308BB3</originalsourceid><addsrcrecordid>eNrjZOAKCfc0NzE3NrBw4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEAC74biA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TWI747308B</title><source>esp@cenet</source><creator>FUKAI, SEIICHIRO ; ONO, YASUSHI ; HASHIGUCHI, YUSUKE</creator><creatorcontrib>FUKAI, SEIICHIRO ; ONO, YASUSHI ; HASHIGUCHI, YUSUKE</creatorcontrib><description>A semiconductor device according to one embodiment of the present disclosure includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip via a spacer; a first terminal group provided around a stacked body in which the first semiconductor chip and the second semiconductor chip are stacked, and coupled to the first semiconductor chip; a second terminal group provided on an outer side of the first terminal group, and coupled to the second semiconductor chip; and a package member that seals the first semiconductor chip, the second semiconductor chip, the first terminal group, and the second terminal group, and in which at least the first terminal group and the second terminal group are exposed on a back face.</description><language>chi</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211121&DB=EPODOC&CC=TW&NR=I747308B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211121&DB=EPODOC&CC=TW&NR=I747308B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUKAI, SEIICHIRO</creatorcontrib><creatorcontrib>ONO, YASUSHI</creatorcontrib><creatorcontrib>HASHIGUCHI, YUSUKE</creatorcontrib><title>TWI747308B</title><description>A semiconductor device according to one embodiment of the present disclosure includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip via a spacer; a first terminal group provided around a stacked body in which the first semiconductor chip and the second semiconductor chip are stacked, and coupled to the first semiconductor chip; a second terminal group provided on an outer side of the first terminal group, and coupled to the second semiconductor chip; and a package member that seals the first semiconductor chip, the second semiconductor chip, the first terminal group, and the second terminal group, and in which at least the first terminal group and the second terminal group are exposed on a back face.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAKCfc0NzE3NrBw4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEAC74biA</recordid><startdate>20211121</startdate><enddate>20211121</enddate><creator>FUKAI, SEIICHIRO</creator><creator>ONO, YASUSHI</creator><creator>HASHIGUCHI, YUSUKE</creator><scope>EVB</scope></search><sort><creationdate>20211121</creationdate><title>TWI747308B</title><author>FUKAI, SEIICHIRO ; ONO, YASUSHI ; HASHIGUCHI, YUSUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI747308BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FUKAI, SEIICHIRO</creatorcontrib><creatorcontrib>ONO, YASUSHI</creatorcontrib><creatorcontrib>HASHIGUCHI, YUSUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUKAI, SEIICHIRO</au><au>ONO, YASUSHI</au><au>HASHIGUCHI, YUSUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TWI747308B</title><date>2021-11-21</date><risdate>2021</risdate><abstract>A semiconductor device according to one embodiment of the present disclosure includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip via a spacer; a first terminal group provided around a stacked body in which the first semiconductor chip and the second semiconductor chip are stacked, and coupled to the first semiconductor chip; a second terminal group provided on an outer side of the first terminal group, and coupled to the second semiconductor chip; and a package member that seals the first semiconductor chip, the second semiconductor chip, the first terminal group, and the second terminal group, and in which at least the first terminal group and the second terminal group are exposed on a back face.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi |
recordid | cdi_epo_espacenet_TWI747308BB |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | TWI747308B |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T23%3A40%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUKAI,%20SEIICHIRO&rft.date=2021-11-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI747308BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |