TWI742348B

One embodiment of the present invention is a sputtering target material which contains an oxide of zinc (Zn), an oxide of tin (Sn) and an oxide of zirconium (Zr), but does not contain indium (In), and wherein: relative to all elements other than oxygen (O), the zinc content AZn is more than 0 at% bu...

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Hauptverfasser: HATA, HIDEO, TAO, YUKI
Format: Patent
Sprache:chi
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Zusammenfassung:One embodiment of the present invention is a sputtering target material which contains an oxide of zinc (Zn), an oxide of tin (Sn) and an oxide of zirconium (Zr), but does not contain indium (In), and wherein: relative to all elements other than oxygen (O), the zinc content AZn is more than 0 at% but 50 at% or less, the tin content ASn is from 20 at% to 80 at% (inclusive), and the zirconium content AZr is more than 0 at% but 40 at% or less; the Zn content AZn satisfies formula (1); the ratio of the maximum value to the minimum value among the plurality of measured specific resistances is 3 or less; and the specific resistances are 5 × 10-1 (Ω·cm) or less. (1): AZn/(AZn + ASn) ≤ 0.6