Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device of the present invention includes at least the following three steps. (A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the se...
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| creator | FUKUMOTO, HIDEKI KURIHARA, HIROYOSHI |
| description | A method for manufacturing a semiconductor device of the present invention includes at least the following three steps.
(A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the semiconductor wafer
(B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer
(C) A step of radiating ultraviolet rays to the adhesive film (100) and then removing the adhesive film (100) from the semiconductor wafer As the adhesive film (100), an adhesive film including a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10) is used. In addition, in the adhesive film (100), the adhesive resin layer (20) includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of a surface of the adhesive resin layer (20) after ultraviolet curing, which is |
| format | Patent |
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(A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the semiconductor wafer
(B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer
(C) A step of radiating ultraviolet rays to the adhesive film (100) and then removing the adhesive film (100) from the semiconductor wafer As the adhesive film (100), an adhesive film including a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10) is used. In addition, in the adhesive film (100), the adhesive resin layer (20) includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of a surface of the adhesive resin layer (20) after ultraviolet curing, which is</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210721&DB=EPODOC&CC=TW&NR=I733784B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210721&DB=EPODOC&CC=TW&NR=I733784B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUKUMOTO, HIDEKI</creatorcontrib><creatorcontrib>KURIHARA, HIROYOSHI</creatorcontrib><title>Method for manufacturing semiconductor device</title><description>A method for manufacturing a semiconductor device of the present invention includes at least the following three steps.
(A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the semiconductor wafer
(B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer
(C) A step of radiating ultraviolet rays to the adhesive film (100) and then removing the adhesive film (100) from the semiconductor wafer As the adhesive film (100), an adhesive film including a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10) is used. In addition, in the adhesive film (100), the adhesive resin layer (20) includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of a surface of the adhesive resin layer (20) after ultraviolet curing, which is</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND1TS3JyE9RSMsvUshNzCtNS0wuKS3KzEtXKE7NzUzOz0spTS4ByqWklmUmp_IwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkviQcE9zY2NzCxMnJ2MilAAAs3gqyQ</recordid><startdate>20210721</startdate><enddate>20210721</enddate><creator>FUKUMOTO, HIDEKI</creator><creator>KURIHARA, HIROYOSHI</creator><scope>EVB</scope></search><sort><creationdate>20210721</creationdate><title>Method for manufacturing semiconductor device</title><author>FUKUMOTO, HIDEKI ; KURIHARA, HIROYOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI733784BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FUKUMOTO, HIDEKI</creatorcontrib><creatorcontrib>KURIHARA, HIROYOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUKUMOTO, HIDEKI</au><au>KURIHARA, HIROYOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for manufacturing semiconductor device</title><date>2021-07-21</date><risdate>2021</risdate><abstract>A method for manufacturing a semiconductor device of the present invention includes at least the following three steps.
(A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the semiconductor wafer
(B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer
(C) A step of radiating ultraviolet rays to the adhesive film (100) and then removing the adhesive film (100) from the semiconductor wafer As the adhesive film (100), an adhesive film including a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10) is used. In addition, in the adhesive film (100), the adhesive resin layer (20) includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of a surface of the adhesive resin layer (20) after ultraviolet curing, which is</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for manufacturing semiconductor device |
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