A method for improving semiconductor thin film flatness
The present invention provides a method for improving semiconductor thin film flatness, the method comprises providing a wafer; performing a vapor phase deposition to from an epitaxial layer on the wafer; wherein a gas suppresses epitaxial layer growth is added during the vapor phase deposition in o...
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| creator | LIN, CHIHHSIN CAO, GONGBAI DONG, CHENHUA |
| description | The present invention provides a method for improving semiconductor thin film flatness, the method comprises providing a wafer; performing a vapor phase deposition to from an epitaxial layer on the wafer; wherein a gas suppresses epitaxial layer growth is added during the vapor phase deposition in order to tune the thickness of the epitaxial layer on the wafer edge to improve flatness of the epitaxial layer. The vapor phase deposition of the present invention can improve the flatness of the epitaxial layer on the wafer edge by adding gases which suppress epitaxial layer growth to tune the thickness of the epitaxial layer on the wafer edge, therefore, the topography of the wafer is improved as well as the SFQR values are decreased. |
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The vapor phase deposition of the present invention can improve the flatness of the epitaxial layer on the wafer edge by adding gases which suppress epitaxial layer growth to tune the thickness of the epitaxial layer on the wafer edge, therefore, the topography of the wafer is improved as well as the SFQR values are decreased.</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210521&DB=EPODOC&CC=TW&NR=I728798B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210521&DB=EPODOC&CC=TW&NR=I728798B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN, CHIHHSIN</creatorcontrib><creatorcontrib>CAO, GONGBAI</creatorcontrib><creatorcontrib>DONG, CHENHUA</creatorcontrib><title>A method for improving semiconductor thin film flatness</title><description>The present invention provides a method for improving semiconductor thin film flatness, the method comprises providing a wafer; performing a vapor phase deposition to from an epitaxial layer on the wafer; wherein a gas suppresses epitaxial layer growth is added during the vapor phase deposition in order to tune the thickness of the epitaxial layer on the wafer edge to improve flatness of the epitaxial layer. The vapor phase deposition of the present invention can improve the flatness of the epitaxial layer on the wafer edge by adding gases which suppress epitaxial layer growth to tune the thickness of the epitaxial layer on the wafer edge, therefore, the topography of the wafer is improved as well as the SFQR values are decreased.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB3VMhNLcnIT1FIyy9SyMwtKMovy8xLVyhOzc1Mzs9LKU0uAYqXZGTmKaRl5uQqpOUkluSlFhfzMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL4kHBPcyMLc0sLJydjIpQAAJdzLlg</recordid><startdate>20210521</startdate><enddate>20210521</enddate><creator>LIN, CHIHHSIN</creator><creator>CAO, GONGBAI</creator><creator>DONG, CHENHUA</creator><scope>EVB</scope></search><sort><creationdate>20210521</creationdate><title>A method for improving semiconductor thin film flatness</title><author>LIN, CHIHHSIN ; 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performing a vapor phase deposition to from an epitaxial layer on the wafer; wherein a gas suppresses epitaxial layer growth is added during the vapor phase deposition in order to tune the thickness of the epitaxial layer on the wafer edge to improve flatness of the epitaxial layer. The vapor phase deposition of the present invention can improve the flatness of the epitaxial layer on the wafer edge by adding gases which suppress epitaxial layer growth to tune the thickness of the epitaxial layer on the wafer edge, therefore, the topography of the wafer is improved as well as the SFQR values are decreased.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | A method for improving semiconductor thin film flatness |
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