W-ti sputtering target
The W-Ti sputtering target according to the present invention is characterized by containing Ti within a range of 5-20 mass%, Fe within a range of 25-100 mass ppm, and Cr within a range of 5-35 mass ppm, the balance having a composition composed of W and unavoidable impurities.
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| creator | KIUCHI, KAHO SAITO, ATSUSHI |
| description | The W-Ti sputtering target according to the present invention is characterized by containing Ti within a range of 5-20 mass%, Fe within a range of 25-100 mass ppm, and Cr within a range of 5-35 mass ppm, the balance having a composition composed of W and unavoidable impurities. |
| format | Patent |
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| language | chi ; eng |
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| subjects | ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | W-ti sputtering target |
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