Semiconductor devices and methods for manufacturing the same

A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUANG, HSIN-YEN, LEE, CHENGIN, WU, YUNG-HSU, LEE, SHAO-KUAN, CHEN, HAIING, SHUE, SHAU-LIN
Format: Patent
Sprache:chi ; eng
Schlagworte:
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