Fin field effect transistor and manufacturing method thereof

A method for fabricating a fin field effect transistor (FinFET) is provided. The method includes: patterning a substrate to form a plurality of trenches in the substrate and at least one semiconductor fin between the trenches; forming a plurality of insulators in the trenches; forming a patterned ph...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JENG, CHIRNG, CHIANG, CHENIEH, LIN, WEN-SHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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