Surface-optimised transistor with superlattice structures

A transistor, including a substrate of a first doping type; an epitaxy layer of the first doping type above the substrate; a channel layer of a second doping type, differing from the first doping type, above the epitaxy layer; a plurality of trenches in the channel layer, which have a gate electrode...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RAMBACH, MARTIN, BANZHAF, CHRISTIAN TOBIAS, JACKE, THOMAS, GRIEB, MICHAEL
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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