Method of optical metrology, computer program product, and metrology module
Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency ma...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , , , , , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | HANDELMAN, AMIR BRINGOLTZ, BARAK LEVIANT, TOM ZAHARAN, OFER YAZIV, TAL COOPER, MOSHE SULIMARSKI, ROEE GUREVICH, EVGENI ADAM, IDO MARCIANO, TAL BACHAR, OHAD CARMEL, NADAV SALTOUN, LILACH EFRATY, BORIS SELLA, NOGA FELER, YOEL ASHWAL, ELTSAFON |
description | Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI711096BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI711096BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI711096BB3</originalsourceid><addsrcrecordid>eNrjZPD2TS3JyE9RyE9TyC8oyUxOzFHITS0pys_JT6_UUUjOzy0oLUktUigoyk8vSswF0SmlySU6Col5KQiFCrlA0ZxUHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oSHxLuaW5oaGBp5uRkTIQSAB3pNcs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of optical metrology, computer program product, and metrology module</title><source>esp@cenet</source><creator>HANDELMAN, AMIR ; BRINGOLTZ, BARAK ; LEVIANT, TOM ; ZAHARAN, OFER ; YAZIV, TAL ; COOPER, MOSHE ; SULIMARSKI, ROEE ; GUREVICH, EVGENI ; ADAM, IDO ; MARCIANO, TAL ; BACHAR, OHAD ; CARMEL, NADAV ; SALTOUN, LILACH ; EFRATY, BORIS ; SELLA, NOGA ; FELER, YOEL ; ASHWAL, ELTSAFON</creator><creatorcontrib>HANDELMAN, AMIR ; BRINGOLTZ, BARAK ; LEVIANT, TOM ; ZAHARAN, OFER ; YAZIV, TAL ; COOPER, MOSHE ; SULIMARSKI, ROEE ; GUREVICH, EVGENI ; ADAM, IDO ; MARCIANO, TAL ; BACHAR, OHAD ; CARMEL, NADAV ; SALTOUN, LILACH ; EFRATY, BORIS ; SELLA, NOGA ; FELER, YOEL ; ASHWAL, ELTSAFON</creatorcontrib><description>Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201121&DB=EPODOC&CC=TW&NR=I711096B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201121&DB=EPODOC&CC=TW&NR=I711096B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HANDELMAN, AMIR</creatorcontrib><creatorcontrib>BRINGOLTZ, BARAK</creatorcontrib><creatorcontrib>LEVIANT, TOM</creatorcontrib><creatorcontrib>ZAHARAN, OFER</creatorcontrib><creatorcontrib>YAZIV, TAL</creatorcontrib><creatorcontrib>COOPER, MOSHE</creatorcontrib><creatorcontrib>SULIMARSKI, ROEE</creatorcontrib><creatorcontrib>GUREVICH, EVGENI</creatorcontrib><creatorcontrib>ADAM, IDO</creatorcontrib><creatorcontrib>MARCIANO, TAL</creatorcontrib><creatorcontrib>BACHAR, OHAD</creatorcontrib><creatorcontrib>CARMEL, NADAV</creatorcontrib><creatorcontrib>SALTOUN, LILACH</creatorcontrib><creatorcontrib>EFRATY, BORIS</creatorcontrib><creatorcontrib>SELLA, NOGA</creatorcontrib><creatorcontrib>FELER, YOEL</creatorcontrib><creatorcontrib>ASHWAL, ELTSAFON</creatorcontrib><title>Method of optical metrology, computer program product, and metrology module</title><description>Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD2TS3JyE9RyE9TyC8oyUxOzFHITS0pys_JT6_UUUjOzy0oLUktUigoyk8vSswF0SmlySU6Col5KQiFCrlA0ZxUHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oSHxLuaW5oaGBp5uRkTIQSAB3pNcs</recordid><startdate>20201121</startdate><enddate>20201121</enddate><creator>HANDELMAN, AMIR</creator><creator>BRINGOLTZ, BARAK</creator><creator>LEVIANT, TOM</creator><creator>ZAHARAN, OFER</creator><creator>YAZIV, TAL</creator><creator>COOPER, MOSHE</creator><creator>SULIMARSKI, ROEE</creator><creator>GUREVICH, EVGENI</creator><creator>ADAM, IDO</creator><creator>MARCIANO, TAL</creator><creator>BACHAR, OHAD</creator><creator>CARMEL, NADAV</creator><creator>SALTOUN, LILACH</creator><creator>EFRATY, BORIS</creator><creator>SELLA, NOGA</creator><creator>FELER, YOEL</creator><creator>ASHWAL, ELTSAFON</creator><scope>EVB</scope></search><sort><creationdate>20201121</creationdate><title>Method of optical metrology, computer program product, and metrology module</title><author>HANDELMAN, AMIR ; BRINGOLTZ, BARAK ; LEVIANT, TOM ; ZAHARAN, OFER ; YAZIV, TAL ; COOPER, MOSHE ; SULIMARSKI, ROEE ; GUREVICH, EVGENI ; ADAM, IDO ; MARCIANO, TAL ; BACHAR, OHAD ; CARMEL, NADAV ; SALTOUN, LILACH ; EFRATY, BORIS ; SELLA, NOGA ; FELER, YOEL ; ASHWAL, ELTSAFON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI711096BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HANDELMAN, AMIR</creatorcontrib><creatorcontrib>BRINGOLTZ, BARAK</creatorcontrib><creatorcontrib>LEVIANT, TOM</creatorcontrib><creatorcontrib>ZAHARAN, OFER</creatorcontrib><creatorcontrib>YAZIV, TAL</creatorcontrib><creatorcontrib>COOPER, MOSHE</creatorcontrib><creatorcontrib>SULIMARSKI, ROEE</creatorcontrib><creatorcontrib>GUREVICH, EVGENI</creatorcontrib><creatorcontrib>ADAM, IDO</creatorcontrib><creatorcontrib>MARCIANO, TAL</creatorcontrib><creatorcontrib>BACHAR, OHAD</creatorcontrib><creatorcontrib>CARMEL, NADAV</creatorcontrib><creatorcontrib>SALTOUN, LILACH</creatorcontrib><creatorcontrib>EFRATY, BORIS</creatorcontrib><creatorcontrib>SELLA, NOGA</creatorcontrib><creatorcontrib>FELER, YOEL</creatorcontrib><creatorcontrib>ASHWAL, ELTSAFON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HANDELMAN, AMIR</au><au>BRINGOLTZ, BARAK</au><au>LEVIANT, TOM</au><au>ZAHARAN, OFER</au><au>YAZIV, TAL</au><au>COOPER, MOSHE</au><au>SULIMARSKI, ROEE</au><au>GUREVICH, EVGENI</au><au>ADAM, IDO</au><au>MARCIANO, TAL</au><au>BACHAR, OHAD</au><au>CARMEL, NADAV</au><au>SALTOUN, LILACH</au><au>EFRATY, BORIS</au><au>SELLA, NOGA</au><au>FELER, YOEL</au><au>ASHWAL, ELTSAFON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of optical metrology, computer program product, and metrology module</title><date>2020-11-21</date><risdate>2020</risdate><abstract>Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_TWI711096BB |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method of optical metrology, computer program product, and metrology module |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T01%3A33%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HANDELMAN,%20AMIR&rft.date=2020-11-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI711096BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |