Methods of forming a gate-to-source/drain contact structure

One illustrative method disclosed herein includes, among other things, performing at least one etching process to expose at least a portion of an upper surface of a gate electrode of a first transistor device and at least a vertical portion of one side surface of the gate electrode and performing a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MERBETH, THOMAS, HOLT, JUDSON R, MULFINGER, GEORGE, XIE, RUILONG, MCARDLE, TIMOTHY J
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!