MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF

The invention discloses a memory structure and a manufacturing method thereof. The memory structure includes a first transistor, a second transistor, a dielectric layer and a capacitor. The second transistor is located on one side of the first transistor. The dielectric layer covers the first transi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE, CHIH-PENG, WEI, I-SHUAN, LIN, JIA-YOU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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