TWI691810B
The purpose of the present invention is to provide a photoresist remover liquid which has excellent resist removal ability, and with which formation of deposits on metal surfaces during the resist removal step can be minimized. This photoresist remover liquid contains dimethyl sulfoxide, a quaternar...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | chi |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | NISHIJIMA, YOSHITAKA |
description | The purpose of the present invention is to provide a photoresist remover liquid which has excellent resist removal ability, and with which formation of deposits on metal surfaces during the resist removal step can be minimized. This photoresist remover liquid contains dimethyl sulfoxide, a quaternary ammonium hydroxide, an amine, water, and an amino acid, the photoresist remover liquid being characterized in that the water content is 30 wt% or less, and the amino acid is at least one selected from the group consisting of alanine, threonine, cysteine, and proline. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI691810BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI691810BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI691810BB3</originalsourceid><addsrcrecordid>eNrjZOAKCfc0szS0MDRw4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEACcobfA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TWI691810B</title><source>esp@cenet</source><creator>NISHIJIMA, YOSHITAKA</creator><creatorcontrib>NISHIJIMA, YOSHITAKA</creatorcontrib><description>The purpose of the present invention is to provide a photoresist remover liquid which has excellent resist removal ability, and with which formation of deposits on metal surfaces during the resist removal step can be minimized. This photoresist remover liquid contains dimethyl sulfoxide, a quaternary ammonium hydroxide, an amine, water, and an amino acid, the photoresist remover liquid being characterized in that the water content is 30 wt% or less, and the amino acid is at least one selected from the group consisting of alanine, threonine, cysteine, and proline.</description><language>chi</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200421&DB=EPODOC&CC=TW&NR=I691810B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200421&DB=EPODOC&CC=TW&NR=I691810B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIJIMA, YOSHITAKA</creatorcontrib><title>TWI691810B</title><description>The purpose of the present invention is to provide a photoresist remover liquid which has excellent resist removal ability, and with which formation of deposits on metal surfaces during the resist removal step can be minimized. This photoresist remover liquid contains dimethyl sulfoxide, a quaternary ammonium hydroxide, an amine, water, and an amino acid, the photoresist remover liquid being characterized in that the water content is 30 wt% or less, and the amino acid is at least one selected from the group consisting of alanine, threonine, cysteine, and proline.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAKCfc0szS0MDRw4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEACcobfA</recordid><startdate>20200421</startdate><enddate>20200421</enddate><creator>NISHIJIMA, YOSHITAKA</creator><scope>EVB</scope></search><sort><creationdate>20200421</creationdate><title>TWI691810B</title><author>NISHIJIMA, YOSHITAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI691810BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIJIMA, YOSHITAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIJIMA, YOSHITAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TWI691810B</title><date>2020-04-21</date><risdate>2020</risdate><abstract>The purpose of the present invention is to provide a photoresist remover liquid which has excellent resist removal ability, and with which formation of deposits on metal surfaces during the resist removal step can be minimized. This photoresist remover liquid contains dimethyl sulfoxide, a quaternary ammonium hydroxide, an amine, water, and an amino acid, the photoresist remover liquid being characterized in that the water content is 30 wt% or less, and the amino acid is at least one selected from the group consisting of alanine, threonine, cysteine, and proline.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi |
recordid | cdi_epo_espacenet_TWI691810BB |
source | esp@cenet |
subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
title | TWI691810B |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T21%3A40%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NISHIJIMA,%20YOSHITAKA&rft.date=2020-04-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI691810BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |