METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM
Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric fr...
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creator | DAVIS, TIMOTHY DUGAN BHATTACHARYYA, KAUSTUVE BYUN, JINMOO NOOT, MARC JOHANNES KIM, HYUN-SU MATHIJSSEN, SIMON GIJSBERT JOSEPHUS JANG, WON-JAE |
description | Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI669577BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI669577BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI669577BB3</originalsourceid><addsrcrecordid>eNrjZDD2dQ0J8vfxd49UALI8_F0UHP2AOCDAMcgxJDQYzHP29w0IDXENUggI8ncPcvTlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxIeGeZmaWpubmTk7GRCgBAHTbJ3U</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM</title><source>esp@cenet</source><creator>DAVIS, TIMOTHY DUGAN ; BHATTACHARYYA, KAUSTUVE ; BYUN, JINMOO ; NOOT, MARC JOHANNES ; KIM, HYUN-SU ; MATHIJSSEN, SIMON GIJSBERT JOSEPHUS ; JANG, WON-JAE</creator><creatorcontrib>DAVIS, TIMOTHY DUGAN ; BHATTACHARYYA, KAUSTUVE ; BYUN, JINMOO ; NOOT, MARC JOHANNES ; KIM, HYUN-SU ; MATHIJSSEN, SIMON GIJSBERT JOSEPHUS ; JANG, WON-JAE</creatorcontrib><description>Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190821&DB=EPODOC&CC=TW&NR=I669577B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190821&DB=EPODOC&CC=TW&NR=I669577B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVIS, TIMOTHY DUGAN</creatorcontrib><creatorcontrib>BHATTACHARYYA, KAUSTUVE</creatorcontrib><creatorcontrib>BYUN, JINMOO</creatorcontrib><creatorcontrib>NOOT, MARC JOHANNES</creatorcontrib><creatorcontrib>KIM, HYUN-SU</creatorcontrib><creatorcontrib>MATHIJSSEN, SIMON GIJSBERT JOSEPHUS</creatorcontrib><creatorcontrib>JANG, WON-JAE</creatorcontrib><title>METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM</title><description>Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD2dQ0J8vfxd49UALI8_F0UHP2AOCDAMcgxJDQYzHP29w0IDXENUggI8ncPcvTlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxIeGeZmaWpubmTk7GRCgBAHTbJ3U</recordid><startdate>20190821</startdate><enddate>20190821</enddate><creator>DAVIS, TIMOTHY DUGAN</creator><creator>BHATTACHARYYA, KAUSTUVE</creator><creator>BYUN, JINMOO</creator><creator>NOOT, MARC JOHANNES</creator><creator>KIM, HYUN-SU</creator><creator>MATHIJSSEN, SIMON GIJSBERT JOSEPHUS</creator><creator>JANG, WON-JAE</creator><scope>EVB</scope></search><sort><creationdate>20190821</creationdate><title>METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM</title><author>DAVIS, TIMOTHY DUGAN ; BHATTACHARYYA, KAUSTUVE ; BYUN, JINMOO ; NOOT, MARC JOHANNES ; KIM, HYUN-SU ; MATHIJSSEN, SIMON GIJSBERT JOSEPHUS ; JANG, WON-JAE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI669577BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVIS, TIMOTHY DUGAN</creatorcontrib><creatorcontrib>BHATTACHARYYA, KAUSTUVE</creatorcontrib><creatorcontrib>BYUN, JINMOO</creatorcontrib><creatorcontrib>NOOT, MARC JOHANNES</creatorcontrib><creatorcontrib>KIM, HYUN-SU</creatorcontrib><creatorcontrib>MATHIJSSEN, SIMON GIJSBERT JOSEPHUS</creatorcontrib><creatorcontrib>JANG, WON-JAE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVIS, TIMOTHY DUGAN</au><au>BHATTACHARYYA, KAUSTUVE</au><au>BYUN, JINMOO</au><au>NOOT, MARC JOHANNES</au><au>KIM, HYUN-SU</au><au>MATHIJSSEN, SIMON GIJSBERT JOSEPHUS</au><au>JANG, WON-JAE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM</title><date>2019-08-21</date><risdate>2019</risdate><abstract>Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
title | METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM |
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