Non-volatile memory (nvm) device in semiconductor-on-insulator ( soi) technology and method of fabricating an according device

The present disclosure provides in one aspect a semiconductor device including a substrate structure comprising an active semiconductor material formed over a base substrate and a buried insulating material formed between the active semiconductor material and the base substrate, a ferroelectric gate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FLACHOWSKY, STEFAN, TRENTZSCH, MARTIN, BEYER, SVEN, HENKE, AXEL
Format: Patent
Sprache:chi ; eng
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