Semiconductor structures and method of forming the same

After forming an epitaxial semiconductor layer on portions of a semiconductor located on opposite sides of a sacrificial gate structure, dopants from the epitaxial semiconductor layer are diffused into the semiconductor fin to form a dopant-containing semiconductor fin. A sacrificial gate stack is r...

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Bibliographische Detailangaben

1. Verfasser:	ONTALUS, VIOREL C
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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