Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid l...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHU, YIN SHUO, TSAI, MIN CHIH, CHANG, TAIN SHANG, YU, CHI CHUNG, FANG, LI YEN, LIANG, YAO HSIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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