Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure

Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid l...

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Hauptverfasser: CHU, YIN SHUO, TSAI, MIN CHIH, CHANG, TAIN SHANG, YU, CHI CHUNG, FANG, LI YEN, LIANG, YAO HSIANG
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHU, YIN SHUO
TSAI, MIN CHIH
CHANG, TAIN SHANG
YU, CHI CHUNG
FANG, LI YEN
LIANG, YAO HSIANG
description A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI637499BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI637499BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI637499BB3</originalsourceid><addsrcrecordid>eNqNi7EKwjAURbs4iPoP7wPsVFG6tii6FxzLI7ltA3lJSVLRvzeCi5vD5XK4566L1HqZLQQucXiRILEt_dNolBFilHd6UckHMsIjKMLFDOz0R528piFjjhg3UpqywYI9_X41HkblKYXMS8C2WA1sI3bf3hR0OXfttcTse8SZFRxS391vx-p0qOumqf5Q3pqMRfM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure</title><source>esp@cenet</source><creator>CHU, YIN SHUO ; TSAI, MIN CHIH ; CHANG, TAIN SHANG ; YU, CHI CHUNG ; FANG, LI YEN ; LIANG, YAO HSIANG</creator><creatorcontrib>CHU, YIN SHUO ; TSAI, MIN CHIH ; CHANG, TAIN SHANG ; YU, CHI CHUNG ; FANG, LI YEN ; LIANG, YAO HSIANG</creatorcontrib><description>A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20181001&amp;DB=EPODOC&amp;CC=TW&amp;NR=I637499B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20181001&amp;DB=EPODOC&amp;CC=TW&amp;NR=I637499B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHU, YIN SHUO</creatorcontrib><creatorcontrib>TSAI, MIN CHIH</creatorcontrib><creatorcontrib>CHANG, TAIN SHANG</creatorcontrib><creatorcontrib>YU, CHI CHUNG</creatorcontrib><creatorcontrib>FANG, LI YEN</creatorcontrib><creatorcontrib>LIANG, YAO HSIANG</creatorcontrib><title>Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure</title><description>A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwjAURbs4iPoP7wPsVFG6tii6FxzLI7ltA3lJSVLRvzeCi5vD5XK4566L1HqZLQQucXiRILEt_dNolBFilHd6UckHMsIjKMLFDOz0R528piFjjhg3UpqywYI9_X41HkblKYXMS8C2WA1sI3bf3hR0OXfttcTse8SZFRxS391vx-p0qOumqf5Q3pqMRfM</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>CHU, YIN SHUO</creator><creator>TSAI, MIN CHIH</creator><creator>CHANG, TAIN SHANG</creator><creator>YU, CHI CHUNG</creator><creator>FANG, LI YEN</creator><creator>LIANG, YAO HSIANG</creator><scope>EVB</scope></search><sort><creationdate>20181001</creationdate><title>Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure</title><author>CHU, YIN SHUO ; TSAI, MIN CHIH ; CHANG, TAIN SHANG ; YU, CHI CHUNG ; FANG, LI YEN ; LIANG, YAO HSIANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI637499BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHU, YIN SHUO</creatorcontrib><creatorcontrib>TSAI, MIN CHIH</creatorcontrib><creatorcontrib>CHANG, TAIN SHANG</creatorcontrib><creatorcontrib>YU, CHI CHUNG</creatorcontrib><creatorcontrib>FANG, LI YEN</creatorcontrib><creatorcontrib>LIANG, YAO HSIANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHU, YIN SHUO</au><au>TSAI, MIN CHIH</au><au>CHANG, TAIN SHANG</au><au>YU, CHI CHUNG</au><au>FANG, LI YEN</au><au>LIANG, YAO HSIANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure</title><date>2018-10-01</date><risdate>2018</risdate><abstract>A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Complementary metal-oxide-semiconductor image sensor and method for forming the same, semiconductor device structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T04%3A41%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHU,%20YIN%20SHUO&rft.date=2018-10-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI637499BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true